tip29a/29c tip30a/30c complementary silicon power transistors n stmicroelectronics preferred salestypes n complementary pnp - npn devices description the tip29a and TIP29C are silicon epitaxial-base npn power transistors mounted in jedec to-220 plastic package. they are intented for use in medium power linear and switching applications. the complementary pnp types are tip30a and tip30c respectively. internal schematic diagram january 2000 1 2 3 to-220 absolute maximum ratings symbol parameter value unit npn tip29a TIP29C pnp tip30a tip30c v cbo collector-base voltage (i e = 0) 60 100 v v ceo collector-emitter voltage (i b = 0) 60 100 v v ebo emitter-base voltage (i c = 0) 5 v i c collector current 1 a i cm collector peak current 3 a i b base current 0.4 a p tot total dissipation at t case 25 o c t amb 25 o c 30 2 w w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c for pnp types voltage and current v alues are negat ive. ? 1/4
thermal data r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 4.17 62.5 o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ceo collector cut-off current (i b = 0) for tip29a/30a v ce = 30 v for TIP29C/30c v ce = 60 v 0.3 0.3 ma ma i ces collector cut-off current (v be = 0) for tip29a/30a v ce = 60 for TIP29C/30c v ce = 100 v 0.2 0.2 ma ma i ebo emitter cut-off current (i c = 0) v eb = 5 v 1 ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 30 ma for tip29a/30a for TIP29C/30c 60 100 v v v ce(sat) * collector-emitter saturation voltage i c = 1 a i b = 125 ma 0.7 v v be(on) * base-emitter voltage i c = 1 a v ce = 4 v 1.3 v h fe * dc current gain i c = 0.2 a v ce = 4 v i c = 1 a v ce = 4 v 40 15 75 h fe small signal current gain i c = 0.2 a v ce = 10 v f = 1 khz i c = 0.2 a v ce = 10 v f = 1 mhz 20 3 * pulsed: pulse duration = 300 m s, duty cycle 2 % for pnp types voltage and current values are negative. tip29a / TIP29C / tip30a / tip30c 2/4
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 p011c to-220 mechanical data tip29a / TIP29C / tip30a tip30c 3/4
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com tip29a / TIP29C / tip30a / tip30c 4/4
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